IMPROVEMENT OF GATE OXIDE RELIABILITY FOR DIRECT TUNGSTEN-GATE USING DENUDATION OF WNx

Authors investigated a gate oxide reliability of metal-oxide-semiconductor capacitors with W and denuded WNx gate. A 5.5 nm-thick SiO2 was used as gate dielectric. The W gate was deposited by dc magnetron sputtering and the denuded WNx gate was formed by N2 annealing following the deposition of WNx....

Full description

Saved in:
Bibliographic Details
Published inJpn.J.Appl.Phys ,Part 2. Vol. 39, no. 8A, pp. L796-L799. 2000 Vol. 39; no. 8A; pp. L796 - L799
Main Authors Han, C H, Sohn, D K, Lee, B H, Park, J-S, Bae, J-U, Park, J W
Format Journal Article
LanguageEnglish
Published 01.08.2000
Online AccessGet full text

Cover

More Information
Summary:Authors investigated a gate oxide reliability of metal-oxide-semiconductor capacitors with W and denuded WNx gate. A 5.5 nm-thick SiO2 was used as gate dielectric. The W gate was deposited by dc magnetron sputtering and the denuded WNx gate was formed by N2 annealing following the deposition of WNx. The leakage current and charge-to-breakdown results indicate that the denuded WNx gate shows improved gate oxide reliability compared with the pure W gate, which is due to the segregation of N atoms at the interface of W and SiO2 film. Sputtering power must be reduced to improve the roughness of metal/SiO2 interface. 21 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
DOI:10.1143/jjap.39.L796