WAFER-BONDED AlGaInP/Au/AuBe/SiO2/Si LIGHT-EMITTING DIODES

• Published in: Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2357-2359. 2000 Vol. 39; no. 4B; pp. 2357 - 2359
• Main Authors: Horng, R-H, Wuu, D-S, Wei, S-C, Tseng, C-Y, Huang, M-F, Chang, K-H
• Format: Journal Article
• Language: English
• Published: 2000
• ISSN: 0021-4922
• DOI: 10.1143/JJAP.39.2357

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (=1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of < 2 V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs. 7 refs.