DIELECTRIC PROPERTIES OF CRYSTALLIZATION PROCESS FROM AMORPHOUS Bi4Ti3O12

The dielectric constant of amorphous Bi4Ti3O12 prepared by a rapid quenching method was measured. The as-quenched sample shows a distinct dielectric anomaly at approximately 600 C. With further heating, the dielectric constant shows an anomalously high value above 750 C. In the sample heated to the...

Full description

Saved in:
Bibliographic Details
Published inJpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9B, pp. 5816-5818. 2001 Vol. 40; no. 9B; pp. 5816 - 5818
Main Authors Takashige, M, Hamazaki, S, Yoshida, R, Kokubun, M, Shimizu, F, Yamaguchi, T
Format Journal Article
LanguageEnglish
Published 2001
Online AccessGet full text

Cover

More Information
Summary:The dielectric constant of amorphous Bi4Ti3O12 prepared by a rapid quenching method was measured. The as-quenched sample shows a distinct dielectric anomaly at approximately 600 C. With further heating, the dielectric constant shows an anomalously high value above 750 C. In the sample heated to the 900 C range, the ferroelectric Bi4Ti3O12 crystalline phase was confirmed by observing the dielectric anomaly at the Curie point. 8 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
DOI:10.1143/JJAP.40.5816