Wang, S., Zhao, W., Giustiniano, F., & Eda, G. (2016). Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors. Physical chemistry chemical physics : PCCP, 18(6), 4304-4309. https://doi.org/10.1039/c5cp07194a
Chicago Style (17th ed.) CitationWang, Shunfeng, Weijie Zhao, Francesco Giustiniano, and Goki Eda. "Effect of Oxygen and Ozone on P-type Doping of Ultra-thin WSe2 and MoSe2 Field Effect Transistors." Physical Chemistry Chemical Physics : PCCP 18, no. 6 (2016): 4304-4309. https://doi.org/10.1039/c5cp07194a.
MLA (9th ed.) CitationWang, Shunfeng, et al. "Effect of Oxygen and Ozone on P-type Doping of Ultra-thin WSe2 and MoSe2 Field Effect Transistors." Physical Chemistry Chemical Physics : PCCP, vol. 18, no. 6, 2016, pp. 4304-4309, https://doi.org/10.1039/c5cp07194a.