Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors

We report on the p-type doping effect of oxygen and ozone molecules on mono- and few-layer WSe2 and MoSe2 field effect transistors. We show that adsorption of oxygen and ozone under ambient conditions results in subtantial doping and corresponding enhancement in the hole conductivity of the devices....

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Published inPhysical chemistry chemical physics : PCCP Vol. 18; no. 6; pp. 4304 - 4309
Main Authors Wang, Shunfeng, Zhao, Weijie, Giustiniano, Francesco, Eda, Goki
Format Journal Article
LanguageEnglish
Published England 14.02.2016
Subjects
Doping
Equivalence
Field effect transistors
Hole conductivity
Oxygen
Ozone
Semiconductor devices
Surface chemistry
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Summary:We report on the p-type doping effect of oxygen and ozone molecules on mono- and few-layer WSe2 and MoSe2 field effect transistors. We show that adsorption of oxygen and ozone under ambient conditions results in subtantial doping and corresponding enhancement in the hole conductivity of the devices. Ozone-induced doping is found to be rapid and efficient, saturating within minutes of exposure whereas oxygen-induced doping occurs over a period of days to reach the equivalent level of doping. Our observations reveal that the water adlayer on the material surface plays a crucial role in solubilizing oxygen and ozone and in forming a redox couple with a large chemical potential.
Bibliography:ObjectType-Article-1
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ISSN:1463-9084
1463-9076
1463-9084
DOI:10.1039/c5cp07194a