Lateral-solid phase epitaxial growth of single-crystal Al(110) films over striped SiO2 patterns

• Published in: Japanese Journal of Applied Physics Vol. 32; no. 9A; pp. 3950 - 3954
• Main Authors: KUSUYAMA, K., NAKAJIMA, Y, MURAKAMI, Y
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.09.1993
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Solid phase epitaxy; growth from solid phases; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Crystal growth; Magnetrons; Cathode sputtering; Monocrystals; Metals; Aluminium; Solid-phase epitaxy; Experimental study; Lateral growth; Substrates
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.32.3950

Aluminum films deposited by the conventional dc magnetron sputtering method over striped SiO2 patterns were single-crystallized by the lateral-solid phase epitaxial (L-SPE) growth method. Single-crystal Al(110) films deposited on striped Si(100) patterns were used as seed areas. The crystal structure of the films was investigated utilizing transmission electron microscopy (TEM), electron diffraction, X-ray diffraction (XRD) and optical microscopy. The grain density along L-SPE grown Al lines is influenced by the epitaxial growth direction. The result suggests the existence of anisotropy in the grain boundary energy of L-SPE grown Al films.