Preparation and electrical properties of SrTiO3 thin films deposited by liquid source metal-organic chemical vapor deposition (MOCVD)

• Published in: Japanese journal of applied physics Vol. 35; no. 9B; pp. 4890 - 4895
• Main Authors: KANG, C. S, HWANG, C. S, CHO, H.-J, LEE, B. T, PARK, S. O, KIM, J. W, HORII, H, LEE, S. I, KOH, Y. B, LEE, M. Y
• Format: Conference Proceeding
• Language: English
• Published: Tokyo Japanese journal of applied physics 1996
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric properties of solids and liquids; Dielectric, ferroelectric, and piezoelectric devices; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Niobates, titanates, tantalates, pzt ceramics, etc; Permittivity (dielectric function); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Inorganic compounds; Dielectric materials; Ternary compounds; Depletion layer; Transition element compounds; Experimental study; MOCVD; Thin films; Thickness; Preparation; Strontium titanates; Leakage current; Permittivity
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.35.4890