Development of Materials and Processes for Double Patterning toward 32 nm Node ArF Immersion Lithography

A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patterning process for 32 nm node semiconductor device...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 21; no. 5; pp. 685 - 690
Main Authors Tarutani, Shinji, Tsubaki, Hideaki, Kanna, Shinichi
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2008
Japan Science and Technology Agency
Subjects
ArF immersion lithography
Developers
double patterning
Immersion
Lithography
negative tone imaging
Patterning
Photopolymers
Roughness
Swelling
Trenches
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Summary:A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patterning process for 32 nm node semiconductor devices. No swelling property was realized in the developing step, in which the dissolution mechanism was discussed. Significantly better line width roughness (LWR) and resolution on narrow trench pattern were observed with this negative tone development compared to positive tone development. These results suggest that this negative tone development process is one of the promising candidates for double trench process.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0914-9244
1349-6336
1349-6336
DOI:10.2494/photopolymer.21.685