Co-Cr系合金薄膜の結晶成長と熱処理効果
The magnetic and crystallographic characteristic of Co-Cr thin films deposited on pure Si(100), naturally oxidized SiO_2/Si and slide glass substrates were compared. Ta layer was examined for the underlayer of Co-Cr-Ta perpendicular recording layer. Pure Si(100) substrate was very effective to prepa...
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Published in | 映像情報メディア学会技術報告 Vol. 25.2; no. 2; pp. 13 - 18 |
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Main Authors | , , |
Format | Journal Article |
Language | Japanese |
Published |
東京 : 映像情報メディア学会
01.01.2001
The Institute of Image Information and Television Engineers 一般社団法人 映像情報メディア学会 |
Series | 画像記録装置および一般 |
Subjects | |
Online Access | Get more information |
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Summary: | The magnetic and crystallographic characteristic of Co-Cr thin films deposited on pure Si(100), naturally oxidized SiO_2/Si and slide glass substrates were compared. Ta layer was examined for the underlayer of Co-Cr-Ta perpendicular recording layer. Pure Si(100) substrate was very effective to prepare Co-Cr thin films which had small grain size and their narrow distribution in the initial layer and higher perpendicular anisotropy energy K_u. And the perpendicular coercivityH_<c⊥> of Co-Cr-Ta layer deposited on Ta underlayer was improved in the Co-Cr-Ta layer thickness δ_ below 50nm. Especially, by annealing in 500[℃] higher perpendicular anisotropy field Hk was attained.
Co-Cr薄膜をSi(100)、表面酸化SiO_2/Si、glass基板に堆積させて、基板による膜の結晶性及び磁気特性の変化を評価した。また、Co-Cr-Ta記録層の下地層としてTa層の導入を検討した。Pure Si(100)基板を用いることにより記録層の垂直異方性エネルギーK_uが増加し、同時に膜初期成長領域で粒子サイズが微細かつ均一な分布の膜が堆積された。一方、Ta層によってその上部に堆積されたCo-Cr-Ta層の結晶性が改善し、δ_:50nm以下の領域で垂直保磁力が向上された。特に、Co-Cr-Ta/Ta膜を500[℃]でannealingすることにより垂直保磁力が増加し、垂直異方性磁界H_kが11[kOe]以上に上昇した。 |
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Bibliography: | MMS2001-9 |
ISSN: | 1342-6893 2424-1970 2424-1970 |
DOI: | 10.11485/itetr.25.2.0_13 |