IMPROVED RELIABILITY CHARACTERISTICS OF ULTRATHIN SiO2 GROWN BY LOW TEMPERATURE OZONE OXIDATION

Authors examined the electrical and structural characteristics of ultrathin SiO2 grown by oxidation of a Si(001) substrate in ozone (O3) ambient at 600 C. Compared with conventional thermally grown oxides in O2 ambient, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed...

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Bibliographic Details
Published inJapanese Journal of Applied Physics, Part 1 Vol. 41; no. 10; pp. 5971 - 5973
Main Authors Chang, H S, Choi, S, Moon, D W, Hwang, H
Format Journal Article
LanguageEnglish
Published 2002
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Summary:Authors examined the electrical and structural characteristics of ultrathin SiO2 grown by oxidation of a Si(001) substrate in ozone (O3) ambient at 600 C. Compared with conventional thermally grown oxides in O2 ambient, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed for ozone oxides by medium energy ion scattering spectroscopy. A significant improvement in the reliability characteristics of a MOS capacitor was observed for a 4-nm-thick gate oxide layer grown in ozone ambient. This improvement in reliability can be explained by the relaxation of strain at the SiO2/Si interface. An ultrathin gate dielectric formed by ozone oxidation has the potential for gate dielectric applications in future MOS device applications. 10 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0021-4922
DOI:10.1143/JJAP.41.5971