ELECTRICAL PROPERTIES OF AND CONDUCTION MECHANISM IN ULTRATHIN ZrO2 FILMS ON Si1-yCy HETEROLAYERS

Ultrathin ZrO2 films with a dielectric constant of 20 have been deposited at 150 C on carbon-implanted solid phase epitaxy (SPE)-grown Si1-yCy heterolayers by microwave PECVD using zirconium tetra-tert-butoxide. The SPE-grown Si1-yCy heterolayers and deposited ZrO2 films have been analyzed by XPS an...

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Published inJpn.J.Appl.Phys ,Part 1. Vol. 43, no. 6A, pp. 3498-3502. 2004 Vol. 43; no. 6A; pp. 3498 - 3502
Main Authors Dalapati, G K, Samanta, S K, Chatterjee, S, Bose, P K, Varma, S, Patil, S
Format Journal Article
LanguageEnglish
Published 01.01.2004
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Summary:Ultrathin ZrO2 films with a dielectric constant of 20 have been deposited at 150 C on carbon-implanted solid phase epitaxy (SPE)-grown Si1-yCy heterolayers by microwave PECVD using zirconium tetra-tert-butoxide. The SPE-grown Si1-yCy heterolayers and deposited ZrO2 films have been analyzed by XPS and FTIR for chemical analysis. The fixed oxide charge density (Qf/q) and interfacial trap density (Dit) of as-deposited ZrO2 films are found to be 2.6 x 1011 cm-2 and 5.6 x 1011 eV-1 cm-2, respectively. The gate current of the ZrO2 layers is found to decrease after 400 C annealing in N2 for 30 min. The main conduction mechanism is dominated by Schottky emission in the ZrO2 films deposited on Si1-yCy layers. 26 refs.
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ISSN:0021-4922
DOI:10.1143/JJAP.43.3498