LIMITATION OF NITROGEN INCORPORATION INTO THE HYDROGENATED AMORPHOUS CARBON NITRIDE FILMS FORMED FROM THE DISSOCIATIVE EXCITATION REACTION OF CH3CN

• Published in: Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 1, pp. 332-337. 2001 Vol. 40; no. 1; pp. 332 - 337
• Main Authors: Ito, H, Ito, N, Takahashi, T, Tanaka, D, Takamatsu, H, Saitoh, H
• Format: Journal Article
• Language: English
• Published: 01.01.2001
• ISSN: 0021-4922
• DOI: 10.1143/jjap.40.332

High-resolution CN(B2S+-X2S+) and CH(A2D-X2P) emission spectra were observed for the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar for synthesizing a-CNx:H films. The simulation analysis of these spectra revealed that the relative number density of CH(A) to that of CN(B), NCH(A)/NCN(B), was strongly dependent on the pressure of Ar, PAr, in the range of PAr=0.1-0.8 Torr. The PAr-dependence of NCH(A)/NCN(B) showed a strongly negative correlation with that of the [N]/([N]+[C]) ratio obtained in our previous structural analysis of the films. This correlation was explained in terms of the consumption of the CN radical by the H-abstraction reaction from the film surface, preventing the incorporation of the N atoms into the a-CNx:H films. 36 refs.