Structural change during annealing of amorphous indium-tin oxide films deposited by sputtering with H2O addition

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Bibliographic Details
Published inJapanese journal of applied physics Vol. 35; no. 5A; pp. 2788 - 2792
Main Authors NISHIMURA, E, ANDO, M, ONISAWA, K.-I, TAKABATAKE, M, MINEMURA, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1996
Subjects
Amorphous semiconductors; glasses
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Other nonelectronic physical properties
Physical properties of thin films, nonelectronic
Physics
Solid-solid transitions
Specific phase transitions
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Annealing
Inorganic compounds
Phase transformations
Ternary compounds
Hall effect
Amorphous state
Experimental study
Thin films
Tin oxides
Indium oxides
Microstructure
Carrier density
Electric conductivity
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.2788