Preparation of ferroelectric Bi4Ti3O12 thin films with c-axis orientation by atmospheric-pressure metal-organic chemical vapor deposition

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Bibliographic Details
Published inJapanese journal of applied physics Vol. 34; no. 5A; pp. 2425 - 2429
Main Authors YOSHIMURA, K, ISHINABE, M, OKAMURA, S, TSUKAMOTO, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1995
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Domain structure; hysteresis
Exact sciences and technology
Ferroelectricity and antiferroelectricity
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Inorganic compounds
Atmospheric pressure
Ternary compounds
Organometallic compounds
Crystal growth from vapors
Experimental study
Bismuth Titanates
CVD
Thin films
Ferroelectricity
Ferroelectric materials
Leakage current
Hysteresis
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.2425