PHOTOCHEMICAL MODIFICATION OF SILICONE FILMS USING F2 LASER FOR SELECTIVE CHEMICAL ETCHING

Silicone ([SiO(CH3)2]n) films were photochemically modified into SiO2 by irradiation with a 157 nm F2 laser. The dissociation of Si-CH3 bonds of silicone simply depended on the photon number of the F2 laser. The quantum yield of the modification was estimated to be approximately 1 x 10-2. Mechanisms...

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Published inJpn.J.Appl.Phys ,Part 1. Vol. 43, no. 6A, pp. 3438-3442. 2004 Vol. 43; no. 6A; pp. 3438 - 3442
Main Authors Okoshi, M, Kimura, T, Takao, H, Inoue, N, Yamashita, T
Format Journal Article
LanguageEnglish
Published 2004
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Summary:Silicone ([SiO(CH3)2]n) films were photochemically modified into SiO2 by irradiation with a 157 nm F2 laser. The dissociation of Si-CH3 bonds of silicone simply depended on the photon number of the F2 laser. The quantum yield of the modification was estimated to be approximately 1 x 10-2. Mechanisms of oxidation and O-H production in the modified films were clarified. The depth of the modification was not limited by the absorption coefficient of silicone because SiO2 of the modified films is transparent for the F2 laser. A fine pattern of the 1.5-mu m-thick silicone films could be fabricated by immersing the modified samples in 0.2 wt% hydrogen fluoride solution. 14 refs.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0021-4922
DOI:10.1143/jjap.43.3438