Preparation of Cu10Zr7 intermetallic compound film and its application as a diffusion barrier in Cu/Cu10Zr7/ZrN/Si contact system

• Published in: Japanese journal of applied physics Vol. 36; no. 12A; pp. 7302 - 7306
• Main Authors: YOSHIMOTO, K.-I, YANAGISAWA, H, SASAKI, K
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1997
• Subjects: Applied sciences; Chemical interdiffusion; diffusion barriers; Condensed matter: structure, mechanical and thermal properties; Diffusion in solids; Diffusion; interface formation; Electronics; Exact sciences and technology; Metallization, contacts, interconnects; device isolation; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Transport properties of condensed matter (nonelectronic); Interfacial layer; LSI circuit; Intermetallic compounds; XRD; Solid-solid interfaces; Experimental study; Heat treatments; Thermal stability; AES; Binary alloys; Integrated circuit manufacture; Microelectronic fabrication; Diffusion barriers; Heating; Copper alloys; Preparation; Solid state reaction; Radiofrequency sputtering; Transition element alloys; Zirconium alloys
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.7302