Local Magnetoresistance at Room Temperature in Si [Formula Omitted] Devices

We show that there is a crystal orientation effect on the two-terminal local magnetoresistance (MR) in silicon (Si)-based lateral spin-valve (LSV) devices. When we compare the local MR effect between Si〈100〉 and Si〈100〉 LSV devices, the magnitude of the local MR signals for Si〈100〉 LSV devices is al...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 54; no. 11; p. 1
Main Authors Ishikawa, Mizue, Tsukahara, Makoto, Yamada, Michihiro, Saito, Yoshiaki, Hamaya, Kohei
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 18.07.2018
Subjects
Crystal structure
Devices
Ferromagnetism
Magnetic fields
Magnetism
Magnetoresistance
Magnetoresistivity
Orientation effects
Polarization (spin alignment)
Room temperature
Silicon
Spin valves
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Summary:We show that there is a crystal orientation effect on the two-terminal local magnetoresistance (MR) in silicon (Si)-based lateral spin-valve (LSV) devices. When we compare the local MR effect between Si〈100〉 and Si〈100〉 LSV devices, the magnitude of the local MR signals for Si〈100〉 LSV devices is always larger than that for Si〈100〉 LSV devices. For Si〈100〉 LSV devices, the magnitude of the room-temperature MR ratio reaches approximately 0.06%. We infer that it is important to consider the tunneling anisotropic spin polarization, which is due to the magnetization direction of the ferromagnetic contacts relative to the Si crystal orientation, in the fabricated LSV devices.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2018.2849753