Characterization of F2 treatment effects on Si(100) surface and Si(100)/SiO2 interface

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Bibliographic Details
Published inJapanese journal of applied physics Vol. 36; no. 4B; pp. 2460 - 2463
Main Authors KANASHIMA, T, KURIOKA, Y, IMAI, T, YAMAMOTO, H, OKUYAMA, M
Format Conference Proceeding
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1997
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Physics
Solid-fluid interfaces
Surface cleaning, etching, patterning
Surface treatments
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Inorganic compounds
Semiconductor materials
Hydrogen
Dry process
Surfaces
Binary compounds
Surface treatments
Desorption
Solid-solid interfaces
Infrared spectra
Experimental study
Surface termination
Surface reactions
Silicon oxides
Nonmetals
Wafers
Silicon
Fluorine molecules
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.2460