In0.52Al0.48As/InxGa1-xAs (0.53<x<1.0) pseudomorphic high electron mobility transistors with high breakdown voltages : design and performances

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Bibliographic Details
Published inJapanese journal of applied physics Vol. 35; no. 1A; pp. 10 - 15
Main Authors DICKMANN, J, RIEPE, K, GEYER, A, MAILE, B. E, SCHURR, A, BERG, M, DAEMBKES, H
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1996
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Ternary compound
Experimental test
Theoretical study
Composition effect
Indium
III-V compound
Gallium Arsenides
Field effect transistor
High electron mobility transistor
Aluminium Arsenides
Molecular beam condensation
Heterojunction transistor
Numerical simulation
Microwave transistor
Indium Arsenides
Electrical characteristic
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ISSN:0021-4922
DOI:10.1143/jjap.35.10