Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions
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Published in | Journal of applied physics Vol. 69; no. 4; pp. 2143 - 2148 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Woodbury, NY
American Institute of Physics
15.02.1991
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Subjects | |
Online Access | Get full text |
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ISSN: | 0021-8979 1089-7550 |
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DOI: | 10.1063/1.348741 |