Single crystalline Si metal/oxide/semiconductor field-effect transistors using high-quality gate SiO2 deposited at 300°C by remote plasma technique

• Published in: Japanese journal of applied physics Vol. 33; no. 1B; pp. 440 - 443
• Main Authors: FUYUKI, T, OKA, T, MATSUNAMI, H
• Format: Conference Proceeding
• Language: English
• Published: Tokyo Japanese journal of applied physics 1994
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; MOS technology; Field effect transistor; Semiconductor device; Voltage current curve; Charge carrier mobility; MOS transistor; Experimental study; Chemical vapor deposition
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.33.440