Electronic structures of In1-xGaxAs-InP strained-layer quantum wells

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Bibliographic Details
Published inJournal of applied physics Vol. 65; no. 8; pp. 3096 - 3100
Main Authors MAU-PHON HOUNG, YIA-CHUNG CHANG
Format Journal Article
LanguageEnglish
Japanese
Published Woodbury, NY American Institute of Physics 15.04.1989
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
Quantum well
Gallium Indium Arsenides Mixed
Electronic structure
Temperature
Semiconductor materials
Indium Phosphides
Theoretical study
Permittivity
Inorganic compound
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ISSN:0021-8979
DOI:10.1063/1.342705