In situ AP-XPS analysis of a Pt thin-film sensor for highly sensitive H2 detection
In situ ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) combined with resistivity measurement was performed for a Pt thin-film H2 gas sensor. We experimentally demonstrate that the chemical state of the Pt surface changes under working conditions, and it directly links to the sensing perf...
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Published in | Chemical communications (Cambridge, England) Vol. 56; no. 70; pp. 10147 - 10150 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English Japanese |
Published |
Cambridge
Royal Society of Chemistry
01.01.2020
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Subjects | |
Online Access | Get full text |
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Summary: | In situ ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) combined with resistivity measurement was performed for a Pt thin-film H2 gas sensor. We experimentally demonstrate that the chemical state of the Pt surface changes under working conditions, and it directly links to the sensing performance. Moreover, the operating principle is discussed at the atomic scale. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1359-7345 1364-548X |
DOI: | 10.1039/d0cc04030d |