Voltage Distribution in Ultra High Voltage SBD Modules with Directly Stacked SiC SBD Bare Chips in Series

High voltage (HV) DC power suppliers are widely studied to improve the efficiency and reduce the size. Cockcroft-Walton (CW) voltage multiplier is generally used in conventional HV power supply owing to its high step-up ratio, low voltage stress on components, and compactness. HV DC power supply can...

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Bibliographic Details
Published inIEEJ JOURNAL OF INDUSTRY APPLICATIONS Vol. 141; no. 8; p. 646
Main Authors Nomura, Yuki, Funaki, Tsuyoshi, Hanada, Toshio, Nakamura, Takashi, 優貴, 野村, 舟木 剛, 俊雄, 花田, 中村 孝
Format Journal Article
LanguageJapanese
Published Tokyo Japan Science and Technology Agency 01.01.2021
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Summary:High voltage (HV) DC power suppliers are widely studied to improve the efficiency and reduce the size. Cockcroft-Walton (CW) voltage multiplier is generally used in conventional HV power supply owing to its high step-up ratio, low voltage stress on components, and compactness. HV DC power supply can be miniaturized by driving the system at high frequency (HF). In this study, an HV SiC schottky barrier diode (SBD) module was developed for HF HV CW circuits, which consist of multiple SiC SBDs directly connected in series and molded in a module package. The switching behavior of the developed SiC SBD module is discussed from the viewpoint of voltage distribution among SBDs.
ISSN:2187-1094
2187-1108
DOI:10.1541/ieejias.141.646