Electronic Structure of Donor-Acceptor type Boron Centered Thermally Activated Delayed Fluorescence Materials: A Quantum Chemical Approach
Thermally activated delayed fluorescence (TADF) materials are subject to extensive research as they possess great potential for application in Organic Light Emitting Diode (OLE D) due to their improved efficiency and design flexibility. In this work two newly designed materials have been studied whe...
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Published in | 2024 International Conference on Recent Progresses in Science, Engineering and Technology (ICRPSET) pp. 1 - 5 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
07.12.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Thermally activated delayed fluorescence (TADF) materials are subject to extensive research as they possess great potential for application in Organic Light Emitting Diode (OLE D) due to their improved efficiency and design flexibility. In this work two newly designed materials have been studied where carbazole and acridine derivatives have been introduced to a mother compound. The mother compound is a boron containing aromatic compound 5,9-dioxa-13b-boranaphtho[3,2,I-de] anthracene (DBA) and the newly designed compounds are 10-(2,12-di-tert-butyl-5,9-dioxa-13b-boranaphtho [3,2,I-de] anthracen-7-yl)-9,9-dimethyl-9,10-dihydroacridine (TDBA-Ac) and (9' -(2,12-di-tert-butyl-5,9-dioxa-13b-boranaphtho[3,2,I-de]anthracen-7-yl)-9' H-9,3,: 6', 9', -tercarbazole (TDBA-3Cz). These emitters show a small singlet-triplet energy gap causing the reverse intersystem crossing (RISC) from triplet to singlet states followed by delayed fluorescence. The optimized geometry, HOMO-LUMO calculations, singlet-triplet energy gaps and optical absorption spectra have been investigated with Density Functional Theory (DFT)-based quantum chemical calculations using the B3L YP functional and 6-31 G' basis set as implemented in Gaussianl6. The singlet-triplet energy difference has been theoretically calculated to be 0.67 eV, 0.12 eV and 0.19 eV for DBA, TDBA-Ac and TDBA-3Cz respectively, rendering TDBA-Ac and TDBA-3Cz suitable to be good TADF materials. |
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DOI: | 10.1109/ICRPSET64863.2024.10955899 |