A 104-to-132 GHz 16-way Power Amplifier Using Enhanced Magnetic Coupling Cavity Achieving 21.2 dBm Output Power in 28nm Bulk CMOS

• Published in: Proceedings of the Custom Integrated Circuits Conference pp. 1 - 3
• Main Authors: Guo, Ziyuan, Deng, Wei, Zheng, Weiqi, Jia, Haikun, Wu, Hongliang, Peng, Qiuyu, Zhao, Fuyuan, Yin, Junyang, Li, Dongze, Chi, Baoyong
• Format: Conference Proceeding
• Language: English
• Published: IEEE 13.04.2025
• Subjects: CMOS technology; Faces; High frequency; Integrated circuit reliability; Magnetic circuits; Power amplifiers; Power generation; Sensors; Transceivers; Voltage

The ultra-wide absolute bandwidth in the sub-THz range enables high data rate communication and high-precision sensing. CMOS technology, particularly in the D-band (110-170GHz), has demonstrated notable potential in these applications [1]-[2]. In D-band transceiver links, high output power amplifier...