A 104-to-132 GHz 16-way Power Amplifier Using Enhanced Magnetic Coupling Cavity Achieving 21.2 dBm Output Power in 28nm Bulk CMOS

The ultra-wide absolute bandwidth in the sub-THz range enables high data rate communication and high-precision sensing. CMOS technology, particularly in the D-band (110-170GHz), has demonstrated notable potential in these applications [1]-[2]. In D-band transceiver links, high output power amplifier...

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Bibliographic Details
Published inProceedings of the Custom Integrated Circuits Conference pp. 1 - 3
Main Authors Guo, Ziyuan, Deng, Wei, Zheng, Weiqi, Jia, Haikun, Wu, Hongliang, Peng, Qiuyu, Zhao, Fuyuan, Yin, Junyang, Li, Dongze, Chi, Baoyong
Format Conference Proceeding
LanguageEnglish
Published IEEE 13.04.2025
Subjects
CMOS technology
Faces
High frequency
Integrated circuit reliability
Magnetic circuits
Power amplifiers
Power generation
Sensors
Transceivers
Voltage
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Summary:The ultra-wide absolute bandwidth in the sub-THz range enables high data rate communication and high-precision sensing. CMOS technology, particularly in the D-band (110-170GHz), has demonstrated notable potential in these applications [1]-[2]. In D-band transceiver links, high output power amplifiers (PAs) are essential to compensate for the significant path loss at high frequencies. However, CMOS technology in D-band faces challenges such as substantial passive losses, limited gain, low output power capabilities, and low reliable source-drain voltage. This leads to reduced output power in CMOS-based PAs, constraining the performance of communication and sensing links.
ISSN:2152-3630
DOI:10.1109/CICC63670.2025.10983173