Fully-Integrated Differential RRAM Cell Designs with Multi-Level Capability and Enhanced Read Margin

This work presents three differential RRAM memory cell designs, that enable multi-state operation. By adding switchable resistances as well as sequential read and programming operations, the proposed configurations enhance memory stability and enable easy system integration by providing a fully-digi...

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Bibliographic Details
Published inIEEE International Symposium on Circuits and Systems proceedings pp. 1 - 5
Main Authors Pechmann, Stefan, Reichel, Peter, Spatling, Thorsten, Hagelauer, Amelie
Format Conference Proceeding
LanguageEnglish
Published IEEE 25.05.2025
Subjects
Circuits and systems
Differential Memory
Memory Integration
Power system stability
Programming
ReRAM
Resistive Switching
Resistors
RRAM
Security
Stability analysis
Switches
Switching circuits
System integration
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ISSN2158-1525
DOI10.1109/ISCAS56072.2025.11043670

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Summary:This work presents three differential RRAM memory cell designs, that enable multi-state operation. By adding switchable resistances as well as sequential read and programming operations, the proposed configurations enhance memory stability and enable easy system integration by providing a fully-digital interface without the need of analog references. They can combine the advantages of differential memory cells and RRAM's multi-level capability. The concepts were realized using a CMOS-integrated RRAM technology and completely integrated in a standard cell grid. The proposed concept has potential to be extended to even more levels and can be adapted to different resistive switching technologies.
ISSN:2158-1525
DOI:10.1109/ISCAS56072.2025.11043670