Enhanced Spin Transfer Torque efficiency in Fe-HfO2/h-BN/Al2O3-Fe compared to existing Fe-MgO-Fe Magnetic Tunnel Junction Device

• Published in: Devices for Integrated Circuit pp. 899 - 902
• Main Authors: Thapa, Abinash, Bhutia, Pema Rinzing, Chettri, Bibek, Pradhan, Prashanta Chandra, Sharma, Bikash
• Format: Conference Proceeding
• Language: English
• Published: IEEE 05.04.2025
• Subjects: Frequency modulation; Hafnium oxide; Iron; Junctions; magnetic random-access memory; magnetic tunnel junction; Magnetic tunneling; non-equilibrium Green's function; spin transfer torque; Stability analysis; Switches; Thermal stability; Torque; Voltage

Novel MTJs structure comprising of LDMs (MgO, Al 2 O 3 , h-BN and HfO 2 ) as tunnel layer sandwiched between Fe as ferromagnetic (FM) layer is designed for novel magnetic random access memory (MRAM) application. MTJLab Tool with inbuilt non-equilibrium Green's function (NEGF) model avails in ca...