Enhanced Spin Transfer Torque efficiency in Fe-HfO2/h-BN/Al2O3-Fe compared to existing Fe-MgO-Fe Magnetic Tunnel Junction Device

Novel MTJs structure comprising of LDMs (MgO, Al 2 O 3 , h-BN and HfO 2 ) as tunnel layer sandwiched between Fe as ferromagnetic (FM) layer is designed for novel magnetic random access memory (MRAM) application. MTJLab Tool with inbuilt non-equilibrium Green's function (NEGF) model avails in ca...

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Bibliographic Details
Published inDevices for Integrated Circuit pp. 899 - 902
Main Authors Thapa, Abinash, Bhutia, Pema Rinzing, Chettri, Bibek, Pradhan, Prashanta Chandra, Sharma, Bikash
Format Conference Proceeding
LanguageEnglish
Published IEEE 05.04.2025
Subjects
Frequency modulation
Hafnium oxide
Iron
Junctions
magnetic random-access memory
magnetic tunnel junction
Magnetic tunneling
non-equilibrium Green's function
spin transfer torque
Stability analysis
Switches
Thermal stability
Torque
Voltage
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Summary:Novel MTJs structure comprising of LDMs (MgO, Al 2 O 3 , h-BN and HfO 2 ) as tunnel layer sandwiched between Fe as ferromagnetic (FM) layer is designed for novel magnetic random access memory (MRAM) application. MTJLab Tool with inbuilt non-equilibrium Green's function (NEGF) model avails in calculating the spin transfer torque (STT) property of MTJs device. As STT define the critical parameters such as switching current density, thermal stability, torque asymmetry and reliability of MTJs. Amongst, HfO 2 and h-BN device showed the highest difference in STT components i.e., 1 mA and 0.8 mA along with higher number of stable and accessible memory states. Hence, they are considered as an ideal candidate for implementation as tunnel layer in advance MTJs device.
ISSN:2996-3044
DOI:10.1109/DevIC63749.2025.11012394