High-Performance Monolayer and Bilayer MoS2 Vibrating Channel Transistors for Ultrasensitive Drain-Source Current Readout of Resonant Motion

• Published in: 2023 International Electron Devices Meeting (IEDM) pp. 1 - 4
• Main Authors: Enamul Hoque Yousuf, S M, Feng, Philip X.-L.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 09.12.2023
• Subjects: Current measurement; Molybdenum; Optical interferometry; Optical resonators; Radio frequency; Semiconductor device measurement; Sulfur
• ISSN: 2156-017X
• DOI: 10.1109/IEDM45741.2023.10413800

We develop and demonstrate high-performance monolayer (1L) and bilayer (2L) MoS 2 vibrating channel transistors (VCTs), and for the first time, directly read out the nm-scale motion of the MoS 2 VCTs by probing the small-signal drain-source current (i DS ). Transfer and transport characteristics of the 1L-MoS 2 VCT exhibits on-current I On = 0.1μA/μm at small V DS = 0.1V, on-off ratio I On /I Off > 10 5 , and transconductance g m = 13nS/μV. 2L-MoS 2 VCTs with graphene contacts demonstrate I On = 0.2μA/μm at V DS = 0.1V, I On /I Off > 10 5 , and g m = 38nS/μV. We have achieved very high electron mobility (μ E ~492 cm 2 /(V*s)) in the 2L-MoS 2 VCT. The channels of the VCTs vibrate near ~33MHz (1L-MoS 2 ) and ~20MHz (2L-MoS 2 ) and we resolve current amplitude down to 6pA by directly measuring i DS of radio-frequency (RF) VCTs. This suggests integrating 2D semiconductor VCTs in back-end-of-line (BEOL) of complementary metal oxide semiconductor (CMOS) chips will enable ultimately scaled RF functions on chip, as well as future 2D transistor-resonator dual-modality sensing and frequency control.