Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer

• Published in: 2023 8th International Conference on Computers and Devices for Communication (CODEC) pp. 1 - 2
• Main Authors: Rao, G. Purnachandra, Ranjan Lenka, Trupti, Trung Nguyen, Hieu Pham
• Format: Conference Proceeding
• Language: English
• Published: IEEE 14.12.2023
• Subjects: 2DEG; AlGaN; GaN; Graded AlGaN; HEMT; polarization; β-Ga 2 O 3

In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The find...