Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer

In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The find...

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Bibliographic Details
Published in2023 8th International Conference on Computers and Devices for Communication (CODEC) pp. 1 - 2
Main Authors Rao, G. Purnachandra, Ranjan Lenka, Trupti, Trung Nguyen, Hieu Pham
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.12.2023
Subjects
2DEG
AlGaN
GaN
Graded AlGaN
HEMT
polarization
β-Ga 2 O 3
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Summary:In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The findings exhibited that the graded buffer HEMT performed significantly better than normal HEMT in terms of transconductance, pinched-off, subthreshold behavior, and DC characteristics.
DOI:10.1109/CODEC60112.2023.10466025