Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

In this work, we study the effect of N 2 surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N 2 plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and impro...

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Bibliographic Details
Published in2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 4
Main Authors Huang, Zhen-Hong, Chang, Chia-Hao, Lin, Wei-Syuan, Lo, Ting-Chun, Ching, Ying-Chi, Huang, Yu-Jen, Hwang, Robin Christine, Chou, Chin-Wen, Wu, Tian-Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 24.07.2023
Subjects
Circuit stability
HEMTs
HTRB
Logic gates
p-GaN HEMT
plasma pretreatment
Plasmas
Stability analysis
Surface resistance
Wide band gap semiconductors
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Summary:In this work, we study the effect of N 2 surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N 2 plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.
ISSN:1946-1550
DOI:10.1109/IPFA58228.2023.10249094