A Comparative study of MOS characteristics with HfO2, ZrO2 and La2O3 as the gate dielectrics on Si substrates

The current work reports fabrication of MOS devices with high-K dielectrics for post- Moore integrated circuits. Such dielectrics are deposited using RF- sputtering technique. The equivalent oxide thickness of HfO 2 , ZrO 2 and La 2 O 3 are maintained to be 2.4 nm. The capacitance-voltage measuremen...

Full description

Saved in:
Bibliographic Details
Published in2023 8th International Conference on Computers and Devices for Communication (CODEC) pp. 1 - 2
Main Authors Basu, Dwaipayan, Banerjee, Anushka, Sengupta, Ankita, Chattopadhyay, Sanatan
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.12.2023
Subjects
capacitance
Dielectrics
flat band voltage
frequency
Hafnium compounds
High-k dielectric materials
interface trap charges
Logic gates
MOSFET
Performance evaluation
Reliability
Silicon
Online AccessGet full text

Cover

More Information
Summary:The current work reports fabrication of MOS devices with high-K dielectrics for post- Moore integrated circuits. Such dielectrics are deposited using RF- sputtering technique. The equivalent oxide thickness of HfO 2 , ZrO 2 and La 2 O 3 are maintained to be 2.4 nm. The capacitance-voltage measurement indicates that the fixed-oxide charge is least for HfO 2 followed by La 2 O 3 and ZrO 2 . The leakage current is also least for HfO 2 and all the devices do not show any breakdown even after a constant voltage stress for 5000 seconds. Further, the shift in flat-band voltage under a constant voltage stress is also least for HfO 2 . Therefore, the current work compares the performance of different high-K dielectrics on Si substrates.
DOI:10.1109/CODEC60112.2023.10466010