A Novel Power Mixer for NB-IoT Transmitter in 65-nm CMOS

NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and cl...

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Published in2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) pp. 1 - 2
Main Authors You, Xiaodong, Feng, Haigang, Xing, Xinpeng, Wang, Zhihua
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Baluns
CMOS
Layout
Mixers
NB-IoT
Power amplifiers
Power demand
Power Mixer
Transistors
Transmitter
Transmitters
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Abstract NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and class-AB power amplifier functions in single stage. Such novel structure achieves low power operation and high linearity with literary half of the layout area comparing with the 2-stages approach. From post layout simulation, 3dBm output power is delivered to 50 \Omega load with 16mA under 2.5V supply. Its in-band emission is less than -57dBc. The drawing area is 0.27mm 2 in a commercial 65-nm CMOS process.
AbstractList NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and class-AB power amplifier functions in single stage. Such novel structure achieves low power operation and high linearity with literary half of the layout area comparing with the 2-stages approach. From post layout simulation, 3dBm output power is delivered to 50 \Omega load with 16mA under 2.5V supply. Its in-band emission is less than -57dBc. The drawing area is 0.27mm 2 in a commercial 65-nm CMOS process.
Author You, Xiaodong
Wang, Zhihua
Xing, Xinpeng
Feng, Haigang
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  surname: Wang
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  organization: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
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Snippet NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power...
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SubjectTerms Baluns
CMOS
Layout
Mixers
NB-IoT
Power amplifiers
Power demand
Power Mixer
Transistors
Transmitter
Transmitters
Title A Novel Power Mixer for NB-IoT Transmitter in 65-nm CMOS
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