A Novel Power Mixer for NB-IoT Transmitter in 65-nm CMOS
NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and cl...
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Published in | 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) pp. 1 - 2 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2018
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Subjects | |
Online Access | Get full text |
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Summary: | NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and class-AB power amplifier functions in single stage. Such novel structure achieves low power operation and high linearity with literary half of the layout area comparing with the 2-stages approach. From post layout simulation, 3dBm output power is delivered to 50 \Omega load with 16mA under 2.5V supply. Its in-band emission is less than -57dBc. The drawing area is 0.27mm 2 in a commercial 65-nm CMOS process. |
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DOI: | 10.1109/EDSSC.2018.8487106 |