Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased ground plane FDSOI high-k/metal gate technology

In this paper we explore the impact of the parasitic bipolar in undoped channel Ultra-Thin BOX (UTBOX) with and without Ground Plane (GP) on a 32nm Fully-Depleted SOI (FDSOI) high-k/metal gate technology. The static parasitic bipolar latch occurs at a drain bias superior to the circuit operation ali...

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Published in2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) pp. 111 - 114
Main Authors Fenouillet-Beranger, C., Perreau, P., Boulenc, P., Tosti, L., Barnola, S., Andrieu, F., Weber, O., Beneyton, R., Perrot, C., de Buttet, C., Abbate, F., Campidelli, Y., Pinzelli, L., Gouraud, P., Margain, A., Peru, S., Bourdelle, K. K., Nguyen, B. Y., Boedt, F., Poiroux, T., Faynot, O., Skotnicki, T., Boeuf, F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2011
Subjects
Hafnium compounds
Logic gates
MOS devices
Silicon
Tin
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Summary:In this paper we explore the impact of the parasitic bipolar in undoped channel Ultra-Thin BOX (UTBOX) with and without Ground Plane (GP) on a 32nm Fully-Depleted SOI (FDSOI) high-k/metal gate technology. The static parasitic bipolar latch occurs at a drain bias superior to the circuit operation alimentation. The several type of ground plane and forward or reverse back biasing don't modify significantly the bipolar breakdown voltage. The thicker EOT gate oxide is more sensible to parasitic bipolar breakdown. Finally, results have been reinforced by using calibrated TCAD simulation tool.
ISBN:9781457707070
1457707071
ISSN:1930-8876
DOI:10.1109/ESSDERC.2011.6044222