APA (7th ed.) Citation

Saremi, M., Ebrahimi, B., & Afzali-Kusha, A. (2010, December). Ground plane SOI MOSFET based SRAM with consideration of process variation. 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, 1-4. https://doi.org/10.1109/EDSSC.2010.5713733

Chicago Style (17th ed.) Citation

Saremi, M., B. Ebrahimi, and Ali Afzali-Kusha. "Ground Plane SOI MOSFET Based SRAM with Consideration of Process Variation." 2010 IEEE International Conference of Electron Devices and Solid-State Circuits Dec. 2010: 1-4. https://doi.org/10.1109/EDSSC.2010.5713733.

MLA (9th ed.) Citation

Saremi, M., et al. "Ground Plane SOI MOSFET Based SRAM with Consideration of Process Variation." 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, Dec. 2010, pp. 1-4, https://doi.org/10.1109/EDSSC.2010.5713733.