A comparison of processes and challenges between organic, a-Si:H, and oxide TFTs for active matrix backplanes on plastic

Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-comp...

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Published in2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 57 - 60
Main Authors de la Fuente Vornbrock, A., Almanza-Workman, M., Dickin, F., Elder, R. E., Garcia, R. A., Holland, E., Jackson, W., Jam, M., Jeans, A., Han-Jun Kim, Hao Luo, Ohseung Kwon, Maltabes, J., Ping Mei, Perlov, C., Rudin, J. C., Smith, M., Trovinger, S., Lihua Zhao, Taussig, C. P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2012
Subjects
Dielectrics
Logic gates
Metals
Organic semiconductors
Plastics
Substrates
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Summary:Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm 2 /Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm 2 /Vs), and a-Si:H (0.5 cm 2 /Vs). Yet despite higher mobilities, organic TFTs drive less current than a-Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies.
ISBN:9781467303996
1467303992