Impact of electron rebound from drain on drive current in nano-scale InGaAs MOSFETs

We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate...

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Bibliographic Details
Published in2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology pp. 1350 - 1352
Main Authors Fujishiro, H I, Watanabe, H, Homma, T, Hara, S
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2010
Subjects
Electric potential
Indium gallium arsenide
Logic gates
MOSFETs
Optical scattering
Silicon
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Summary:We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate length, L g , of 10 nm. However the electron rebound becomes pronounced instead when the electrons degenerate at the bottleneck. Consequently the average electron velocity at the bottleneck, v s , decreases. This considerably diminishes the potential of the InGaAs MOSFETs for the current drivability.
ISBN:9781424457977
1424457971
DOI:10.1109/ICSICT.2010.5667657