Effects of scattering on transport properties in GaN

The mobility of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures changes significantly with Al content in the AlGaN layer and also determined from temperature-dependent Hall Effect measurements, while few mechanism analysis focus on it. Theoretical calculation and analysis of th...

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Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 647 - 651
Main Authors Pramanick, Mridanku Shekhar, Ghosal, Aniruddha
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
conductivity
drain current
Electron Mobility
Gallium nitride
HEMTs
Impurities
MODFETs
Optical scattering
Phonons
power dissipation
Scattering
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Summary:The mobility of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures changes significantly with Al content in the AlGaN layer and also determined from temperature-dependent Hall Effect measurements, while few mechanism analysis focus on it. Theoretical calculation and analysis of the 2DEG mobility in AlGaN/GaN heterostructures are carried out based on the recently reported experimental data. We have considered different scattering mechanism while calculating electron mobility, such as, polar optical phonon scattering, ionized impurity scattering, background impurity scattering. The result is that at low temperatures ion impurity scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant. The variation of conductivity, drain current and power dissipation with temperature in AlGaN/GaN has been studied considering phonon interactions with electrons. The conductivity and power dissipation in AlGaN/GaN is highest at 80 Ks phonons.
DOI:10.1109/DEVIC.2017.8074030