Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments

This paper demonstrates the switching of several conductive filaments in RRAM using a small-size FUSI gate NMOS transistor. The theory for predicting the maximum applicable V set is elaborated. Modeling of filament conduction with a quantum mechanical model reveals that the reset operation correspon...

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Bibliographic Details
Published in2010 International Electron Devices Meeting pp. 28.4.1 - 28.4.4
Main Authors Degraeve, R, Roussel, P, Goux, L, Wouters, D, Kittl, J, Altimime, L, Jurczak, M, Groeseneken, G
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2010
Subjects
Conductivity
Current measurement
Electrodes
Logic gates
MOSFETs
Resistance
Switches
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Summary:This paper demonstrates the switching of several conductive filaments in RRAM using a small-size FUSI gate NMOS transistor. The theory for predicting the maximum applicable V set is elaborated. Modeling of filament conduction with a quantum mechanical model reveals that the reset operation corresponds to a narrowing of the filament.
ISBN:9781442474185
1442474181
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2010.5703438