Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection

GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation were fabricated and characterized. Inductance couple plasma (ICP) etching would cause significant damage on GaN MSM photodetectors. The damage...

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Bibliographic Details
Published in2007 Asia-Pacific Microwave Conference pp. 1 - 4
Main Authors Yu-Zung Chiou, Tsun-Kai Ko, Chun-Kai Wang, Tien-Kun Lin, Kuan-Wei Lin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2007
Subjects
emission microscopy
Gallium nitride
ICP etching
Inspection
Leakage current
Microscopy
MSM
p-i-n
Passivation
Photodetectors
PIN photodiodes
Plasma applications
Plasma chemistry
Plasma devices
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Summary:GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation were fabricated and characterized. Inductance couple plasma (ICP) etching would cause significant damage on GaN MSM photodetectors. The damage was proved to induce leakage current via the surface of device by using emission microscopy inspection. However, the surface damage can be partially recovered by E-gun SiO2 passivation. As for the passivation for p-i-n photodetectors, the effect is not significant in the reduction of dark current due to smaller etched area as compare to the whole area of p-i-n PDs.
ISBN:9781424407484
1424407486
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2007.4554889