Temperature Coefficient of Frequency in Silicon-Based Cross-Sectional Quasi Lam e; Mode Resonators

Temperature coefficient of frequency (TCF) is studied in silicon-based cross-sectional quasi Lamé modes (CQLMs). Such modes are demonstrated in thin-film piezoelectric-on-silicon (TPoS) resonators and the TCF curves are modeled using eigenfrequency analysis in COMSOL for highly n-type doped silicon....

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Bibliographic Details
Published in2018 IEEE International Frequency Control Symposium (IFCS) pp. 1 - 5
Main Authors Shahraini, Sarah, Abdolvand, Reza, Fatemi, Hedy
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2018
Subjects
Aluminum nitride
III-V semiconductor materials
Lame mode
MEMS resonator
piezoelectric actuation
Resonant frequency
Resonators
Silicon
Temperature
temperature coefficient of frequency (TCF)
Temperature measurement
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Summary:Temperature coefficient of frequency (TCF) is studied in silicon-based cross-sectional quasi Lamé modes (CQLMs). Such modes are demonstrated in thin-film piezoelectric-on-silicon (TPoS) resonators and the TCF curves are modeled using eigenfrequency analysis in COMSOL for highly n-type doped silicon. It is shown that the ratio between the finger-pitch and the resonator thickness affects the turnover temperature of these resonators which could be predicted using this model. The CQLM-TPoS resonators fabricated on a 40\mu\mathbf{m} thick SOI substrate, are characterized and the measured TCF values are confirmed to be in close agreement with the prediction. A relatively high turnover temperature of >100°C is reported for a third-order CQLM-TPoS resonator aligned to silicon plane while a turnover temperature of <20°C is recorded for the counterpart.
ISSN:2327-1949
DOI:10.1109/FCS.2018.8597506