Highly efficient and inverted tandem organic light-emitting devices using a MoO3/Al/MoO3 charge generation layer

We present a bottom-emission, inverted, tandem phosphorescent organic light-emitting devices (PHOLEDs) using a multilayer charge generation layer (CGL) of MoO 3 /Al/MoO 3 (MAM), which exhibit a maximum external quantum efficiency of 40% and current efficiency of 120 cd/A. In this inverted tandem str...

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Bibliographic Details
Published in2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 56 - 59
Main Authors Tzu-Hung Yeh, Po-Chien Chang, Ya-Ze Li, Shun-Wei Liu, Sheng-Bin Chen, Chih-Chien Lee
Format Conference Proceeding
LanguageEnglish
Published FTFMD 01.07.2016
Subjects
Capacitance
Capacitance-voltage characteristics
Indium tin oxide
Joining processes
Organic light emitting diodes
Performance evaluation
Thin film transistors
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Summary:We present a bottom-emission, inverted, tandem phosphorescent organic light-emitting devices (PHOLEDs) using a multilayer charge generation layer (CGL) of MoO 3 /Al/MoO 3 (MAM), which exhibit a maximum external quantum efficiency of 40% and current efficiency of 120 cd/A. In this inverted tandem structure, the feature of MAM shows a high optical transmittance (approximately 80%) in visible light, an efficient charge generation property, and a relatively smooth morphology as serving an efficient CGL to connect the bottom and top display units. In addition, the device structure of ITO/LiF/TAPC/MAM/BPhen: CS 2 CO 3 /BPhen/LiF/Al was proposed to capacitance characterization, and the results demonstrated that using the ultra-thin Al of ~ 2 nm in MAM structure exhibited a more efficient CGL for high performance inverted tandem PHOLEDs.
DOI:10.1109/AM-FPD.2016.7543618