Soft Oxide Breakdown impact on the functionality of a 40 nm SRAM memory

As CMOS technology continues to downscale to a deep submicron level (40 nm and beyond), Soft Oxide Breakdown (SBD) is becoming a real problem that could lead to a serious degradation in the performances and the functional operations of SoC. In this paper we study the SBD, using two models, and quant...

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Bibliographic Details
Published in2011 International Reliability Physics Symposium pp. CR.3.1 - CR.3.2
Main Authors Cheffah, S, Huard, V, Chevallier, R, Bravaix, A
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2011
Subjects
Arrays
Delay drift
Electric breakdown
Integrated circuit modeling
Libraries
Random access memory
Sensitivity
Soft Oxide Breakdown (SBD)
SRAM functional failure
System-on-a-chip
Transistor SBD models
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Summary:As CMOS technology continues to downscale to a deep submicron level (40 nm and beyond), Soft Oxide Breakdown (SBD) is becoming a real problem that could lead to a serious degradation in the performances and the functional operations of SoC. In this paper we study the SBD, using two models, and quantify its impact on the functionality of a 40 nm SRAM memory.
ISBN:1424491134
9781424491131
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2011.5784561