A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs

In this paper, the applied bias, detrapping time and temperature dependences of frequency dispersion of output resistance and transconductance of a GaN MESFET are reported.

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Bibliographic Details
Published in61st Device Research Conference. Conference Digest (Cat. No.03TH8663) pp. 69 - 70
Main Authors Islam, S.S., Anwar, A.F.M., Webster, R.T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Electric variables
Electrons
Frequency
Gallium nitride
MESFETs
Military computing
Temperature dependence
Temperature sensors
Transconductance
Voltage
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Summary:In this paper, the applied bias, detrapping time and temperature dependences of frequency dispersion of output resistance and transconductance of a GaN MESFET are reported.
ISBN:9780780377271
0780377273
DOI:10.1109/DRC.2003.1226876