A novel III-V/Si Chip-on-Wafer Direct Transfer Bonding technology

Three-Dimensional (3D) integration of group III-V compound semiconductor material on Si wafer (III-V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. A technique for direct bonding of III-V chips on a large-diameter Si wafer is an attractive...

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Bibliographic Details
Published in2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC) pp. 1 - 6
Main Authors Kurita, Yoichiro, Inamura, Miki, Kakumoto, Yasuhide, Yamada, Yasuhisa, Abe, Tomoyuki
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2015
Subjects
Annealing
Bonding
Epitaxial layers
III-V semiconductor materials
Indium phosphide
Silicon
Surface treatment
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Summary:Three-Dimensional (3D) integration of group III-V compound semiconductor material on Si wafer (III-V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. A technique for direct bonding of III-V chips on a large-diameter Si wafer is an attractive approach for manufacturing these structures, but there is a difficulty in that ultra-clean particle-free surface is required during the III-V wafer dicing and diced chip bonding processes. Therefore, we proposed a new "Chip-on-Wafer Direct Transfer Bonding" (CoW DTB) technology for this purpose, and also developed new equipment for this technology. The processes were evaluated using AlGaInAs/InP Multiple Quantum Well (MQW) epitaxial wafer and Si wafer on which oxide film is deposited, and high-quality bonding was confirmed by Transmission Electron Microscopy (TEM) observation.
DOI:10.1109/EPTC.2015.7412409