Fabrication of Monolithic Bidirectional Switch (MBS) devices with MOS-controlled emitter structures

A novel high-voltage power device, the monolithic bidirectional switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned silicidation. Results obtained from electrical characte...

Full description

Saved in:
Bibliographic Details
Published in2006 IEEE International Symposium on Power Semiconductor Devices and IC's pp. 1 - 4
Main Authors Baus, M., Szafranek, B.N., Chmielus, S., Lemme, M.C., Hadam, B., Spangenberg, B., Sittig, R., Kurz, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Etching
Fabrication
Insulated gate bipolar transistors
Matrix converters
Oxidation
Power electronics
Silicidation
Silicon
Switches
Voltage
Online AccessGet full text

Cover

More Information
Summary:A novel high-voltage power device, the monolithic bidirectional switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned silicidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm 2 at V on = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter
ISBN:9780780397149
0780397142
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2006.1666101