Fabrication of Monolithic Bidirectional Switch (MBS) devices with MOS-controlled emitter structures
A novel high-voltage power device, the monolithic bidirectional switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned silicidation. Results obtained from electrical characte...
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Published in | 2006 IEEE International Symposium on Power Semiconductor Devices and IC's pp. 1 - 4 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2006
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Subjects | |
Online Access | Get full text |
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Summary: | A novel high-voltage power device, the monolithic bidirectional switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned silicidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm 2 at V on = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter |
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ISBN: | 9780780397149 0780397142 |
ISSN: | 1063-6854 1946-0201 |
DOI: | 10.1109/ISPSD.2006.1666101 |